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1 3 2 sot - 363 6 4 5 dual general purpose transistors maximum ratings rating symbol v alue unit collector-emitter voltage v ceo vdc (npn) 40 (pnp) -40 collector-base voltage v cbo vdc (npn) 60 (pnp) -40 emitter-base voltage v ebo vdc (npn) 6.0 (pnp) -5.0 collector current-continuous i c madc (npn) 200 (pnp) -200 electrostatic discharge e sd hbm>16000, v mm>2000 thermal characteristics characteristic symbol max unit total package dissipation (1) p d 150 mw t a = 25c thermal resistance junction r ja 833 c/w to ambient junction and storage t j ,t stg C55 to +150 c temperature range the m mbt3946dw1t1 device is a spin?off of our popular sot?23/sot?323 three?leaded device. it is designed for general purpose amplifier applications and is housed in the sot?363 six?leaded surface mount package. by putting two discrete devices in one package, this device is ideal for low?power surface mount applications where board space is at a premium. h fe , 100?300 low v ce(sat) , < 0.4 v simplifies circuit design reduces board space reduces component count available in 8 mm, 7?inch/3,000 unit tape and reel device marking:m mbt3946dw1t1 = 46 0mbt3946dw1t1* *q1 pnp q2 npn 1. device mounted on fr4 glass epoxy printed circuit board using the minimum 1. recommended footprint. ordering information device marking shipping m mbt3946dw1t1 46 3000units/reel 4 6 5 3 1 2 q 2 q 1 compliance with rohs requirements. we declare that the material of product 2012-0 willas electronic corp. MMBT3946DW1T1
electrical characteristics (t a =25c unless otherwise noted) characteristic symbol m in max unit off characteristics collectorCemitter breakdown voltage (2) v (br)ceo vdc (i c = 1.0 madc, i b = 0) (npn) 40 C (i c = C1.0 madc, i b = 0) (pnp) C40 C collectorCbase breakdown voltage v (br)cbo vdc (i c = 10 adc, i e = 0) (npn) 60 C (i c = C10 adc, i e = 0) (pnp) C40 C emitterCbase breakdown voltage v (br)ebo vdc (i e = 10 adc, i c = 0) (npn) 6.0 C (i e = C10 adc, i c = 0) (pnp) C5.0 C base cutoff current i bl nadc (v ce = 30 vdc, v eb = 3.0 vdc) (npn) C 50 (v ce = C30 vdc, v eb = C3.0 vdc) (pnp) C C50 collector cutoff current i cex nadc (v ce = 30 vdc, v eb = 3.0 vdc) (npn) C 50 (v ce = C30 vdc, v eb = C3.0 vdc) (pnp) C C50 on characteristics (2) dc current gain h fe C (i c = 0.1 madc, v ce = 1.0 vdc) (npn) 40 C (i c = 1.0 madc, v ce = 1.0 vdc) 70 C (i c = 10 madc, v ce = 1.0 vdc) 100 300 (i c = 50 madc, v ce = 1.0 vdc) 60 C (i c = 100 madc, v ce = 1.0 vdc) 30 C (i c = C0.1 madc, v ce = C1.0 vdc) (pnp) 60 C (i c = C1.0 madc, v ce = C1.0 vdc) 80 C (i c = C10 madc, v ce = C1.0 vdc) 100 300 (i c = C50 madc, v ce = C1.0 vdc) 60 C (i c = C100 madc, v ce = C1.0 vdc) 30 C collectorCemitter saturation voltage v ce(sat) vdc (i c = 10 madc, i b = 1.0 madc) (npn) C 0.2 (i c = 50 madc, i b = 5.0 madc) C 0.3 (i c = C10 madc, i b = C1.0 madc) (pnp) C C0.25 (i c = C50 madc, i b = C5.0 madc) C C0.4 baseCemitter saturation voltage v be(sat) vdc (i c = 10 madc, i b = 1.0 madc) (npn) 0.65 0.85 (i c = 50 madc, i b = 5.0 madc) C 0.95 (ii c = C10 madc, i b = C1.0 madc) (pnp) C0.65 C0.85 (i c = C50 madc, i b = C5.0 madc) C C0.95 2. pulse test: pulse width < 300 s; duty cycle < 2.0%. 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
electrical characteristics (t a =25c unless otherwise noted) characteristic symbol m in max unit smallCsignal characteristics currentCgain C bandwidth product f t mhz (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) (npn) 300 C (i c = C10 madc, v ce = C20 vdc, f = 100 mhz) (pnp) 250 C output capacitance c obo pf (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) (npn) C 4.0 (v cb = C5.0 vdc, i e = 0, f = 1.0 mhz) (pnp) C 4.5 input capacitance c ibo pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) (npn) C 8.0 (v eb = C0.5 vdc, i c = 0, f = 1.0 mhz) (pnp) C 10.0 i nput impedance h ie k ? (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) 1.0 10 (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) (pnp) 2.0 12 voltage feedback ratio h re x 10 C4 (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) 0.5 8.0 (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) (pnp) 0.1 10 smallCsignal current gain h fe C (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) 100 400 (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) (pnp) 100 400 output admittance h oe mhos (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) 1.0 40 (v ce = C10 vdc, i c = C1.0 madc, f = 1.0 khz) (pnp) 3.0 60 noise figure n f db (v ce =5.0 vdc,i c =100 adc, r s =1.0 k ? , f=1.0khz) (npn) C 5.0 (v ce =C5.0 vdc,i c =C100 adc, r s =1.0 k ? , f=1.0khz) (pnp) C 4.0 switching characteristics delay time (v cc = 3.0 vdc, v be = C0.5 vdc) (npn) t d C35 (v cc = C3.0 vdc, v be = 0.5 vdc) (pnp) C 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) (npn) t r C35 (i c = C10 madc, i b1 = C1.0 madc) (pnp) C 35 storage time (v cc = 3.0 vdc, i c = 10 madc) (npn) t s C 200 (v cc = C3.0 vdc, i c = C10 madc) (pnp) C 225 ns fall time (i b1 = i b2 = 1.0 madc) (npn) t f C50 (i b1 = i b2 = C1.0 madc) (pnp) C 75 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
figure 1. delay and rise t ime equivalent t est circuit figure 2. storage and fall t ime equivalent t est circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v' +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias vol t age (vol ts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacit ance (pf) 1.0 2.0 3.0 5.07.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25c t j = 125c (npn) (npn) typical electrical characteristics m mbt3946dw1t1 (npn) 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
typical electrical characteristics m mbt3946dw1t1 (npn) figure 5. turnon time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t' , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t' s = t s - 1 / 8 t f i b1 = i b2 (npn) (npn) (npn) (npn) typical audio smallsignal characteristics noise figure variations (v ce = 5.0 vdc, t a = 255c, bandwidth = 1.0 hz) figure 9. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. noise figure r s , source resistance (k ohms) 0 nf , noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf , noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a (npn) (npn ) 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
typical electrical characteristics m mbt3946dw1t1 (npn) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h ,input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 (npn) (npn) (npn) (npn) 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
typical electrical characteristics m mbt3946dw1t1 (npn) figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.00.7 200 3020 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25c -55c (npn) figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter vol t age (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.00.7 5.0 7.0 ce i c = 1.0 ma t j = 25 0.070.05 0.03 0.02 0.01 10 ma 30 ma 100 ma (npn) figure 17. "on" v oltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 200 t j = 25 v be(sat) @i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0v +25c to +125c -55c to +25c +25 c to +125 c -55c to +25 c vc for v ce(sat) for v be(sat) (npn) (npn) c c vb 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
typical electrical characteristics m mbt3946dw1t1 (pnp) figure 19. delay and rise time equivalent test circuit figure 20. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 21. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 22. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.07.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25c t j = 125c (pnp) (pnp) figure 23. turn - on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 24. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0v 40 v 15 v 2.0 v (pnp) (pnp) 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
typical electrical characteristics m mbt3946dw1t1 (pnp) typical audio smallsignal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25c , bandwidth = 1.0 hz) figure 25. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 26. r g , source resistance (k ohms) 0 nf , noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf , noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c =50 a i c =100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resist ance = 2.0 k i c = 50 a (pnp) (pnp) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) figure 27. current gain i c , collector current (ma) 70 100 200 300 50 figure 28. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 29. input impedance i c , collector current (ma) figure 30. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0 h , voltage feedback ratio (x 10 ) re -4 (pnp) (pnp) (pnp) (pnp) 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
typical electrical characteristics m mbt3946dw1t1 (pnp) figure 31. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.00.7 200 3020 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c (pnp) figure 32. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.00.7 5.0 7.0 ce i c = 1.0 ma t j = 25c 0.070.05 0.03 0.02 0.01 10 ma 30 ma 100 ma (pnp) figure 33. "on" voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 34. t emperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25c +125c -55c to +25c +25c +125c -55c +25c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/c) v (pnp) (pnp) to to to 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1
0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm sot - 363 2012-0 willas electronic corp. dual general purpose transistors MMBT3946DW1T1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071 (1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)

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